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SPIRES-BOOKS: FIND KEYWORD METAL OXIDE SEMICONDUCTORS RELIABILITY MATHEMATICAL MODELS *END*INIT* use /tmp/qspiwww.webspi1/18821.57 QRY 131.225.70.96 . find keyword metal oxide semiconductors reliability mathematical models ( in books using www Cover Image
Call number:TK7874.L334::1993 Show nearby items on shelf
Title:Hot-carrier reliability of MOS VLSI circuits
Author(s): Yusuf Leblebici
Sung-Mo Kang
Date:1993
Publisher:Boston : Kluwer Academic
Size:212 p.
Contents:Preface. 1. Introduction. 2. Oxide Degradation Mechanisms in MOS Transistors. 3. Modeling of Degradation Mechanisms. 4. Modeling of Damaged MOSFETs. 5. Transistor-Level Simulation for Circuit Reliability. 6. Fast Timing Simulation for Circuit Reliability. 7. Macromodeling of Hot-Carrier Induced Degradation in MOS Circuits. 8. Circuit Design for Reliability
ISBN:079239352X
Series:Kluwer international series in engineering and computer science
Keywords: Integrated circuits Very large scale integration Defects Mathematical models. , Metal oxide semiconductors Reliability Mathematical models. , Hot carriers Reliability Mathematical models.
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