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SPIRES-BOOKS: FIND KEYWORD MICROWAVE TRANSISTORS *END*INIT* use /tmp/qspiwww.webspi1/31419.19 QRY 131.225.70.96 . find keyword microwave transistors ( in books using www Cover
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Call number:9781608077113:ONLINE Show nearby items on shelf
Title:Control components using Si, GaAs, and GaN technologies
Author(s): I. J. Bahl
Date:2014
Publisher:Artech House
Size:1 online resource (310 p)
Contents:Chapter 1 Introduction - History of Components - Types of Control Components - Solid-State Switching Devices - Design of Control Components - Fabrication of Control Components - Chapter 2 Control Devices - PIN Diodes - Operation of PIN Diodes - PIN Diode Models - GaAs MESFETs - Operation of MESFETs - Linear Switch FET Models - Nonlinear Switch FET Models - GaAs HEMTs - GaAs HBTs - GaN HEMTs - CMOS Transistors - Operation of CMOS Switch - Various Body Floating Techniques - CMOS Transistor Models - Schottky Diodes - Varactor Diodes - Transistor Model Scaling - Biasing of Switching Devices - Biasing of PIN Diodes - Biasing of Transistors - Switching Speed of PIN Diodes - Switching Speed of Transistors - Comparison of Switching Devices - Chapter 3 Switches - Switch Parameters - Basic Requirements of a Switch for Wireless Applications - Design of Switches - Switch Configurations - Basic Theory of Switches - Multiport Switches - Matrix Switches - Diversity Switch - High Isolation Switches - Broadband Switches - High-Power Switches - Impedance Transformation Technique - Stacked FETs Method - Resonant Circuit Technique - GaN HEMT Switches - Power Handling of PIN Diode Switches - Low Distortion Switches - Performance of Switch Circuits - PIN D iode Switch Circuits - MESFET Switch Circuits - HEMT Switch Circuits - CMOS Switch Circuits - Comparison of Switch Technologies - Novel Switch Configurations - Filter-Integrated Switch - Redundant Switch - Switched Variable Power Amplifier - Switches with Integrated Control - Intermodulation Analysis of Switches - PIN Diode Switches - MESFET Switches
Chapter 4 Phase Shifters - Digital Phase Shifters - Analog Phase Shifters - Active Phase Shifters - Theory of Phase Shifters - Reflection-Type Phase Shifter - Switched-Line Phase Shifter - Loaded-Line Phase Shifters - Switched-Network Phase Shifter s - Embedded-Device Phase Shifters - Multibit Phase Shifter Circuits - RMS Errors - PIN Diode Phase Shifters - MESFET/HEMT Phase Shifters - CMOS Phase Shifters - Analog Phase Shifters - Voltage-Controlled Reflection-Type Phase Shifters - Voltage-Controlle d Transmission-Type Phase Shifters - Analog Varactor Diode Phase Shifters - Analog CMOS Phase Shifters - Broadband Phase Shifters - GaAs MESFET/HEMT Broadband Phase Shifters - Broadband CMOS Phase Shifters - Ultrawideband Phase Shifters - Millimeter-Wave Phase Shifters - PIN/Schottky Diode Millimeter-Wave Phase Shifters -MESFET/HEMT Millimeter-Wave Phase Shifters - CMOS Millimeter-Wave Phase Shifters - Active Phase Shifters - Dual-Gate FET Phase Shifters - Switchable-Amplifier Phase Shifters - Vector Modu lator Phase Shifters - Chapter 5 Attenuators - Theory of Attenuators - Fabrication of Attenuators - Fixed Value Attenuators - Attenuator Pad - Temperature Variable Attenuator - Multibit Attenuators - PIN Diode Step Attenuators - GaAs MMIC Step Attenuators - Si CMOS Step Attenuators - Variable Voltage Attenuators - PIN Diode Variable Attenuators - MESFET Variable Attenuators - CMOS Variable Attenuator - GaN HEMT Attenuator - Linear Voltage Variable Attenuators -Reflection-Type Attenuators - Balanced Attenu ators - Frequency Dependent Attenuators - Phase Compensated Attenuators - CMOS Attenuator with Integrated Switch - Distortion in Attenuators - PIN Diode Attenuators - FET Attenuators
Chapter 6 Limiters - Limiter Characterization - Limiter Types - PIN Diode Limiters - Analysis of PIN Diode Limiter - Si PIN Diode Limiters in Microstrip Configuration - GaAs PIN Diode Limiters - Matched Limiters - Schottky Diode Limiters - Analysis of Schottky Diode Limiter - Schottky Diode Design and Limiter Configuration - Broadband High Power Limiters - Monolithic GaAs Schottky Diode Limiter Circuits - Limiting Amplifiers - 10-W Limiter with Embedded LNA - BiCMOS Diode Limiter - GaN Schottky Diod e Limiters
ISBN:9781608077113
Series:Artech House microwave library
Series:eBooks
Series:Artech eBooks
Keywords: Electronic circuits, Mathematical models. , Solid state electronics , Microwave integrated circuits
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Call number:9781608074891:ONLINE Show nearby items on shelf
Title:Microwave mixer technology and applications
Author(s): Bert Henderson
Edmar Camargo
Date:2013
Publisher:Artech House
Size:1 online resource (864 p.)
Contents:Chapter 1 Origins of Electronic Mixers -- History of Radio Development -- Single Ended Circuits -- Singly Balanced Mixers -- Doubly Balanced Star Circuit -- Special Receiver Architectures -- Harmonic Mixers -- Self-Oscillating Balanced Mixers -- Dis tributed Mixers . Chapter 2 System Parameters and Performance -- System Overview -- Digital Modulation -- Error Performance -- Receiver Architectures -- Mixer Linearity . Noise -- Noise and Distortion in Communication Subsystems -- Dynamic Range . Chapter 3 Semiconductor Modeling -- Modeling Schottky Diodes -- Modeling Bipolar Transistors -- Modeling Field Effect Transistors . Chapter 4 Passive and Active Coupling Structures -- Balun Structure -- Marchand Balun -- Microstrip Baluns -- Lumped Elements -- S lotline Type -- Active Approach -- Hybrid Couplers (Magic-T) -- Quadrature Hybrids -- Appendix 4A Guanella 4-1 Transformer -- Appendix 4B Compensated Balun -- Appendix 4C Active FET Power Divider -- Appendix 4D Alternative FET Power Divider -- Appendix 4E Active FET Combiner
Chapter 5 Diode Mixer Theory -- History of Linear and Nonlinear Analysis -- Linear Mixer Analysis -- Frequency Conversion Matrix -- Computer Simulation Example -- Large Signal Conversion Analysis -- Subharmonic Mixer -- Balanced Diode Circuits -- Mi xer Circuit Synthesis -- Appendix 5A Parasitic Losses in Diode Mixers -- Appendix 5B Conversion Matrix Including Parasitics -- Appendix 5C Image Imp. and RF-Image Conversion -- Appendix 5D Saleh Exp. Diode Mixer Performance -- Chapter 6 Diode Applications -- Single Ended -- Singly Balanced -- Doubly Balanced -- Triply Balanced -- Quadrature Mixers -- Subharmonic Mixers -- Chapter 7 BJT Mixer Theory -- Low Frequency Mixer -- Conversion Matrix -- Mixer Properties -- Design Study: CDMA Down-Converter -- Ca scode Approach -- Singly Balanced Mixer -- Singly Balanced Subharmonic -- Doubly Balanced Mixer -- WiFi 2.45 GHz Gilbert Mixer -- Differential Triple Level -- Doubly Balanced Subharmonic -- Subharmonic Triple Level -- Appendix 7A Gummel Poon Parameters -- Appendix 7B Spice Parameters . Chapter 8 Bipolar Junction Transistor Applications -- Single Ended -- Parallel Combined Mixers -- Integrated Circuit Topologies -- Doubly Balanced -- Image Reject -- Subharmonic Topologies
Chapter 9 CFET Mixer Theory -- Gate LO Injection -- Source LO Injection -- Drain LO Injection -- Resistive Approach -- Cascode Mixer -- Singly Balanced -- Doubly Balanced -- Subharmonic Mixing -- Distributed Mixers -- Appendix 9A NE67300 Parameters -- Chapter 10 Passive FET Applications -- Single Ended -- Floating Approach -- Singly Balanced -- Doubly Balanced -- Distributed GaAs Applications . Chapter 11 Active FET Applications -- Single Ended -- Singly Balanced Doubly Balanced -- Subharmonic Appro ach -- Self-Oscillating FET Mixer -- Distributed Applications
ISBN:9781608074891
Series:Artech House microwave library
Series:eBooks
Series:Artech eBooks
Keywords: Microwave mixers.
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Call number:1118921526:ONLINE Show nearby items on shelf
Title:Heterojunction Bipolar Transistors for Circuit Design: Microwave Modelling and Parameter Extraction
Author(s): Gao
Date:2015
Publisher:Wiley
Size:1 online resource (260 p.)
ISBN:9781118921524
Series:eBooks
Series:Wiley Online Library
Series:Wiley 2016 package purchase
Keywords: Electrical & Electronics Engineering
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Call number:TK7871.96.M53G74::2007 Show nearby items on shelf
Title:RF and microwave transistor oscillator design
Author(s): Andrei Grebennikov
Date:2007
Publisher:Chichester : John Wiley
Size:441 p.
Contents:Preface. -- Acknowledgements. -- 1 Nonlinear circuit design methods. -- 1.1 Spectral domain analysis. -- 1.2 Time domain analysis. -- 1.3 Newton Raphson algorithm. -- 1.4 Quasilinear method. -- 1.5 Van der Pol method. -- 1.6 Computer aided analysis and design. -- 2 Oscillator operation and design principles. -- 2.1 Steady state operation mode. -- 2.2 Start up conditions. -- 2.3 Oscillator configurations and historical aspects. -- 2.4 Self bias condition. -- 2.5 Oscillator analysis using matrix techniques. -- 2.6 Dual transistor oscillators. -- 2.7 Transmission line oscillator. -- 2.8 Push push oscillator. -- 2.9 Triple push oscillator. -- 2.10 Oscillator with delay line
3.1 Negative resistance oscillator circuits. -- 3.2 General single frequency stability condition. -- 3.3 Single resonant circuit oscillators. -- 3.4 Double resonant circuit oscillator. -- 3.5 Stability of multi resonant circuits. -- 3.6 Phase plane method. -- 3.7 Nyquist stability criterion. -- 3.8 Start up and stability. -- 4 Optimum design and circuit technique. -- 4.1 Empirical optimum design approach. -- 4.2 Analytic optimum design approach. -- 4.3 Parallel feedback oscillators. -- 4.4 Series feedback bipolar oscillators. -- 4.5 Series feedback MESFET oscillators. -- 4.6 High efficiency design technique. -- 4.7 Practical oscillator schematics. -- 5 Noise in oscillators. -- 5.1 Noise figure. -- 5.2 Flicker noise. -- 5.3 Active device noise modelling. -- 5.4 Oscillator noise spectrum: linear model. -- 5.5 Oscillator noise spectrum: nonlinear model. -- 5.6 Loaded quality factor. -- 5.7 Amplitude to phase conversion. -- 5.8 Oscillator pulling figure. -- 6 Varactor and oscillator frequency tuning. -- 6.1 Varactor modelling. -- 6.2 Varactor nonlinearity. -- 6.3 Frequency modulation. -- 6.4 Anti series varactor pair. -- 6.5 Tuning linearity. -- 6.6 Reactance compensation technique. -- 6.7 Practical VCO schematics.
7 CMOS voltage controlled oscillators. -- 7.1 MOS varactor. -- 7.2 Phase noise. -- 7.3 Flicker noise. -- 7.4 Tank inductor. -- 7.5 Circuit design concepts and technique. -- 7.6 Implementation technology issues. -- 7.7 Practical schematics of CMOS VCOs. -- 8 Wideband voltage controlled oscillators. -- 8.1 Main requirements. -- 8.2 Single resonant circuits with lumped elements. -- 8.3 Double resonant circuit with lumped elements. -- 8.4 Transmission line circuit realization. -- 8.5 VCO circuit design aspects. -- 8.6 Wideband nonlinear design. -- 8.7 Dual mode varactor tuning. -- 8.8 Practical RF and microwave wideband VCOs. -- -- 9 Noise reduction techniques. -- 9.1 Resonant circuit design technique. -- 9.2 Low frequency loading and feedback optimization. -- 9.3 Filtering technique. -- 9.4 Noise shifting technique. -- 9.5 Impedance noise match
ISBN:9780470025352
Keywords: Microwave transistors. , Radio frequency oscillators. , Oscillators, Transistor.
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Call number:SPRINGER-2004-9783642188701:ONLINE Show nearby items on shelf
Title:Silicon Carbide Recent Major Advances
Author(s):
Date:2004
Size:1 online resource (899 p.)
Note:10.1007/978-3-642-18870-1
Contents:Zero- and Two-Dimensional Native Defects -- Defect Migration and Annealing Mechanisms -- Hydrogen in SiC -- Electronic Properties of Stacking Faults and Thin Cubic Inclusions in SiC Polytypes -- Principles and Limitations of Numerical
Simulation of SiC Boule Growth by Sublimation -- Defect Formation and Reduction During Bulk SiC Growth -- High Nitrogen Doping During Bulk Growth of SiC -- Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas -- Low-Defect
3C-SiC Grown on Undulant-Si (001) Substrates -- New Development in Hot Wall Vapor Phase Epitaxial Growth of Silicon Carbide -- Formation of SiC Thin Films by Ion Beam Synthesis -- Atomic Structure of SiC Surfaces -- The Continuum of
Interface-Induced Gap States — The Unifying Concept of the Band Lineup at Semiconductor Interfaces — Application to Silicon Carbide -- Contributions to the Density of Interface States in SiC MOS Structures -- Properties of Nitrided
Oxides on SiC -- Hall Effect Studies of Electron Mobility and Trapping at the SiC/SiO2 Interface -- Optical Properties of SiC: 1997–2002 -- Cyclotron Resonance Studies of Effective Masses and Band Structure in SiC -- Electronic
Structure of Deep Defects in SiC -- Phosphorus-Related Centers in SiC -- Hall Scattering Factor for Electrons and Holes in SiC -- Radiotracer Deep Level Transient Spectroscopy -- Vacancy Defects Detected by Positron Annihilatio --
Characterization of Defects in SiC Crystals by Raman Scattering -- Characterization of Low-Dimensional Structures in SiC Using Advanced Transmission Electron Microscopy -- Synchrotron White Beam X-Ray Topography and High Resolution
X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Device Structures -- Ohmic Contacts for Power Devices on SiC -- Micromachining of SiC -- Surface Preparation Techniques for SiC Wafers -- Epitaxial Growth and Device
Processing of SiC on Non-Basal Planes -- SiC Power Bipolar Transistors and Thyristors -- High Voltage SiC Devices -- Power MOSFETs in 4H-SiC: Device Design and Technology -- Normally-Off Accumulation-Mode Epi-Channel Field Effect
Transistor -- Development of SiC Devices for Microwave and RF Power Amplifiers -- Advances in SiC Field Effect Gas Sensors
ISBN:9783642188701
Series:eBooks
Series:SpringerLink (Online service)
Series:Springer eBooks
Keywords: Engineering , Condensed matter , Optics , Optoelectronics , Plasmons (Physics) , Electronics , Microelectronics , Optical materials , Electronic materials , Materials science , Materials , Thin films , Engineering , Electronics and Microelectronics, Instrumentation , Optical and Electronic Materials , Characterization and Evaluation of Materials , Surfaces and Interfaces, Thin Films , Condensed Matter Physics , Optics, Optoelectronics, Plasmonics and Optical Devices
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Call number:SPRINGER-2004-9781441990921:ONLINE Show nearby items on shelf
Title:Quantum Computing and Quantum Bits in Mesoscopic Systems
Author(s):
Date:2004
Size:1 online resource (273 p.)
Note:10.1007/978-1-4419-9092-1
Contents:1 When is a Quantum-Mechanical System “Isolated”? -- 2 Manipulation and Readout of a Josephson Qubit -- 3 Aharonov-Casher Effect Suppression of Macroscopic Flux Tunneling -- 4 Squid Systems in View of Macroscopic Quantum Coherence and
Adiabatic Quantum Gates -- 5 Test of an rf-Squid System with Stroboscopic One-Shot Readout Under Microwave Irradiation -- 6 Squid Rings as Devices for Controlling Quantum Entanglement and Information -- 7 Manipulating Quantum
Transitions in a Persistent Current Qubit -- 8 Vortices in Josephson Arrays Interacting with Nonclassical Microwaves in a Dissipative Environment -- 9 Realization of the Universal Quantum Cloning and of the Not Gate by Optical
Parametric Amplification -- 10 New Quantum Nanostructures: Boron-Based Metallic Nanotubes and Geometric Phases in Carbon Nanocones -- 11 Transport Investigations Of Chemical Nanostructures -- 12 Long-Range Coherence In Bose-Einstein
Condensates -- 13 A Simple Quantum Equation for Decoherence Through Interaction with the Environment -- 14 Searching for a Semiclassical Shor’s Algorithm -- 15 Low Tc Josephson Junction Response to An Ultrafast Laser Pulse -- 16
Influence of the Measurement Process on the Step Width in the Coulomb Staircase -- 17 Josephson Junction Triangular Prism Qubits Coupled to a Resonant Lc Bus: Qubits and Gates for a Holonomic Quantum Computer -- 18 Incoherent and
Coherent Tunneling of Macroscopic Phase in Flux Qubits -- 19 Decoherence in Flux Qubits Due to 1/f Noise in Josephson Junctions -- 20 Zeeman Splitting in Quantum Dots -- 21 Gate Errors in Solid-State Quantum Computer Architectures --
22 Quantum Computing with Electron Spins in Quantum Dots -- 23 Relation Between Dephasing and Renormalization Phenomena in Quantum Two-Level Systems -- 24 Superconducting Quantum Computing Without Switches -- 25 Scalable Architecture
for Adiabatic Quantum Computing of Np-Hard Problems -- 26 Semiclassical Analysis of 1/f Noise in Josephson Qubits -- 27 Solid-State Analog of an Optical Interferometer -- 28 Single Electron Transistors with Al/AlOx/Nb and Nb/AlOx/Nb
Junctions -- 29 Time-Local Master Equations: Influence Functional and Cumulant Expansion
ISBN:9781441990921
Series:eBooks
Series:SpringerLink (Online service)
Series:Springer eBooks
Keywords: Physics , Atoms , Condensed matter , Solid state physics , Spectroscopy , Microscopy , Physics , Condensed Matter Physics , Atomic, Molecular, Optical and Plasma Physics , Solid State Physics , Spectroscopy and Microscopy
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Call number:SPRINGER-2002-9781461507376:ONLINE Show nearby items on shelf
Title:International Workshop on Superconducting Nano-Electronics Devices SNED Proceedings, Naples, Italy, May 28–June 1, 2001
Author(s):
Date:2002
Size:1 online resource (241 p.)
Note:10.1007/978-1-4615-0737-6
Contents:Quantum Nondemolition Measurements of a Qubit -- Bayesian Quantum Measurement of a Single-Cooper-Pair Qubit -- 1/f Noise in Josephson Qubits -- Switching Currents and Quasi-Particle Poisoning in the Superconducting Single Electron
Transistor -- Josephson Systems for Quantum Coherence Experiments -- Solid State Analogue of Double Slit Interferometer -- Noise and Microwave Properties of SET-Transistors -- Use of Small Tunnel Junctions Operating at T = 0.3 K -- A
Hysteric Single Cooper Pair Transistor for Single Shot Reading of a Charge-Qubit -- Single Cooper Pair Electrometer Based on a Radio-Frequency-SQUID Scheme -- Possibility of Single-Electron Devices and Superconducting Coherence --
Frequency-Locked Current of Cooper Pairs in Superconducting Single Electron Transistor with Ohmic Resistor -- Setup for Experiments on the Supercurrent-Phase Relation in Bloch Transistors-Status and Possible Applications --
Single-Electron Transistors in the Regime of High Conductance -- Superconducting Transistor-Edge Sensors for Time & Energy Resolved Single-Photon Counters and for Dark Matter Searches -- Optimization of the Hot-Electron Bolometer and a
Cascade Quasiparticle -- Noise in Refrigerating Tunnel Junctions and in Microbolometers -- Nonequilibrium Quasiparticles and Electron Cooling by Normal Metal-Superconductor Tunnel Junctions -- Mesoscopic Josephson Junctions Coupled to
Weak Coherent Fields: An Example of Reciprocal Detection -- Dynamics of Superconducting Interferometers Containing Pi-Junctions -- Superconducting Current-Phase Dependence on High-Tc Symmetrical Bicrystal Junctions -- Superconducting
Quantum Detector for Astronomy and X-Ray Spectroscopy -- Lifetime of Even-Parity States of a Bloch Transistor -- Magnetic Field Dependence of Retrapping Currents in DC-SQUIDs -- Josephson versus Kondo Coupling at a Quantum Dot with
Superconducting Contacts
ISBN:9781461507376
Series:eBooks
Series:SpringerLink (Online service)
Series:Springer eBooks
Keywords: Physics , Optics , Electrodynamics , Engineering , Electronics , Microelectronics , Optical materials , Electronic materials , Materials science , Physics , Optics and Electrodynamics , Electronics and Microelectronics, Instrumentation , Physics, general , Engineering, general , Characterization and Evaluation of Materials , Optical and Electronic Materials
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Call number:SPRINGER-1999-9783540445531:ONLINE Show nearby items on shelf
Title:Advances in Solid State Physics 39
Author(s):
Date:1999
Size:1 online resource (593 p.)
Note:10.1007/BFb0107459
Contents:Semiconductor applications in metrology -- 125 years of metal-semiconductor contacts: Where do we stand? -- Physics of semiconductor sensors -- Thermal nano-phase change of an antimony thin films and the application for optical
near-field data storage -- AMR–sensors. All the way up from a deposited thin film to a commercial sensor -- High resolution calorimetric low temperature detectors for applications in atomic and nuclear physics -- Controlled doping of
molecular organic layers: Physics and device prospects -- Organic electroluminescent devices -- High-mobility conjugated polymer field-effect transistors -- Ground state and collective excitations of quantum dots: Correlation effects
and Hund’s rule in magnetic field -- Nanomechanical resonators operating in the radio frequency regime as single charge detectors -- Ge and Si nanocrystals—New ways to luminescence structures -- Formation of low-dimensional
semiconductor nanostructures on corrugated surfaces -- Optical absorption of heterogeneous thin solid films -- Nanolithography on semiconductor heterostructures by local oxidation with an atomic force microscope -- Ion beam synthesis
of semiconductor nanoclusters for opto-and microelectronics applications -- Single-electron transistor as a local electrometer on top of a two-dimensional electron system in the quantum hall regime -- Spatially resolved measurements
near the breakdown of the quantum hall effect -- Half-filled Landau level—Composite fermions and dipoles -- A new resistance maximum from electron-nuclear-spin interaction in the fractional quantum-hall-effect state -- Magnetization
phenomena of a two-dimensional electron system in the quantum hall regime -- Microwave studies in the quantum hall effect regimes -- Metal-insulator transition in two dimensions -- Scaling and level statistics at the Anderson
transition -- The Mott-Hubbard metal-insulator transition in the limit of large dimensions—Insights and outlook -- Fermi and non-fermi liquid behavior in quantum impurity systems: Conserving slave boson theory -- Quantum spin systems:
From spin gaps to pseudo gaps -- Modulated phases in spin-Peierls systems -- Magnetic frustration and spin-Peierls transition in CuGeO3 -- Mesoscopic effects in the thermopower of dilute AuFe alloys -- Re-entrant spin susceptibility of
ultrasmall superconducting grains -- Two-quasiparticle tunneling and subgap structure in all-superconducting single-electron transistors -- Fixed-N superconductivity: The crossover from the bulk to the few-electron limit --
Heavy-fermion superconductivity induced by antiferromagnetic spin fluctuations -- Self-organized charge confinement in cuprate superconductors: Effects on the normal-and superconducting state -- Nucleation of stable superconductivity
in YBCO-films -- RE-Ba-Cu-O bulk materials: Thermodynamics, proceeding, properties control -- Junctions and interfaces in D-wave superconductors -- Reversible laser annealing and magneto-optical characterization of HTSC thin films --
Doping dependence of the antiferromagnetic correlations in La2?x SrxCuO4 and Y1?x CaxBa2Cu3O6 -- Coherence properties of resonant secondary emission -- Time- and phase-resolved resonant Rayleigh scattering by wannier excitons in a 2D
potential with disorder -- Emission from radiatively coupled periodic quantum well structures -- Optical and structural properties connected with partial ordering in the ternary compound semiconductor GalnP -- Excitonic coherence in
semiconductor nanostructures measured by speckle analysis -- Phase sensitive femtosecond spectroscopy of semiconductors -- High-intensity laser pulse propagation in semiconductors -- Ultrafast spectral interferometry of resonant
secondary emission from semiconductor quantum wells -- Room-temperature near-field reflection spectroscopy of semiconductor nanostructures -- Versatile probes for scanning probe microscopy -- Magneto-optic microscopy beyond the
diffraction limit: Facts, trends, and dreams -- Growth studies of hetero-epitaxial thin films with x-rays -- Fracture mechanisms and strength of thin films -- Laser nitriding of iron and steel -- Optical spectroscopy methods applied
during semiconductor layer growth -- How much information is carried by fluctuation spectra?
ISBN:9783540445531
Series:eBooks
Series:SpringerLink (Online service)
Series:Springer eBooks
Series:Advances in Solid State Physics: 39
Keywords: Physics , Condensed matter , Physics , Condensed Matter Physics
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Call number:SPRINGER-1993-9783642781278:ONLINE Show nearby items on shelf
Title:Gas Source Molecular Beam Epitaxy Growth and Properties of Phosphorus Containing III-V Heterostructures
Author(s): Morton B Panish
Date:1993
Size:1 online resource (428 p.)
Note:10.1007/978-3-642-78127-8
Contents:1. Introduction -- 1.1 Introduction to Molecular Beam Epitaxy -- 1.2 Introduction to Gas Source Molecular Beam Epitaxy -- 1.3 Why Gas Sources? -- 1.4 Heterostructures with GSMBE -- 2. Chemistry -- 2.1 Equilibrium, the Phase Diagram,
and Molecular Beam Epitaxy -- 2.2 Liquid-Solid-Vapor Relationships for the Growth of InP and GaAs -- 2.3 III-V Solid Solutions -- 2.4 Group III Metalorganics — Metalorganic MBE -- 2.5 Group V Metalorganics to Replace Arsine and
Phosphine -- 3. The Generation of Atomic and Molecular Beams for Elemental and Gas Source Molecular Beam Epitaxy -- 3.1 Background -- 3.2 Molecular Effusion: The Ideal Effusion Cell -- 3.3 Real Effusion Cells -- 3.4 Gas Sources and
Their Use in GSMBE -- 3.5 Introduction of the Group III Metalorganics into the MBE System -- 4. Molecular Beam Epitaxy Systems and Procedures -- 4.1 The Conventional Growth Chamber-Configuration for ESMBE, HSMBE and MOMBE -- 4.2 System
Pressure — Pumping -- 4.3 Sample Introduction, Transfer and Manipulation -- 4.4 Substrate Temperature Measurement and Control -- 4.5 Gas Handling -- 4.6 Arsine and Phosphine Generators -- 4.7 Safe Handling of Arsine and Phosphine for
GSMBE -- 4.8 Procedures for GSMBE -- 4.9 The RHEED Apparatus, Growth Rate and Composition Calibration -- 4.10 Metalorganic MBE Systems — Potential for Scaleup -- 5. Doping During GSMBE -- 5.1 Background -- 5.2 Maximum Free-Carrier
Concentrations in Semiconductors -- 5.3 Background Doping and Carbon Incorporation -- 5.4 Doping with Tin -- 5.5 Doping with Be -- 5.6 Zn in InP and GaInAs -- 5.7 Si in GaAs, InP and GaInAs -- 5.8 Semi-insulating InP by Fe Doping
During MBE -- 6. Characterization of Heterostructures by High Resolution X-ray Diffraction -- 6.1 X-Ray Diffraction of Epitaxial Layers -- 6.2 Periodic Epitaxial Semiconductor Structures -- 6.3 High-Resolution X-Ray Diffraction -- 6.4
High-Resolution Rocking Curves of Superlattices -- 6.5 Intrinsic Strain at Heterostructure Interfaces -- 7. Optical Properties of Quantum Wells -- 7.1 Energy Levels in Quantum Wells -- 7.2 Single Quantum Wells -- 7.3 Superlattices --
7.4 Quantum Wires and Boxes -- 7.5 Electric Field Effects -- 7.6 Strained-Layer Superlattices -- 7.7 Thermal Stability -- 8. Carrier Transport Across Quantum Wells and Superlattices -- 8.1 Experimental Techniques -- 8.2 Motion of
Photo-Induced Holes -- 8.3 Sequential Screening -- 8.4 Barrier Height -- 8.5 Heterojunction Band Offsets -- 8.6 Telegraph Noise -- 9. Bipolar Transistors -- 9.1 Background -- 9.2 Figures of Merit -- 9.3 Device Fabrication -- 9.4 DC
Characteristics -- 9.5 Temperature Dependence -- 9.6 Carrier Transport -- 9.7 Gain Dependence on the Base Thickness -- 9.8 Microwave Devices -- 9.9 Applications -- 10. Optoelectronic Devices -- 10.1 Broad-Area Lasers -- 10.2 Buried
Heterostructure Lasers -- 10.3 Single-Frequency Lasers -- 10.4 Visible Lasers -- 10.5 Photodetectors -- 10.6 Quantum-Well Inter-sub-band Detectors -- 11. In-Situ Processing and Selective Area Epitaxy -- 11.1 Pattern Formation -- 11.2
Ion-Induced Damage -- 11.3 Towards Vacuum Lithography -- 11.4 Buried Heterostructures -- 11.5 Selective-Area Epitaxy -- References
ISBN:9783642781278
Series:eBooks
Series:SpringerLink (Online service)
Series:Springer eBooks
Series:Springer Series in Materials Science: 26
Keywords: Physics , Optics , Optoelectronics , Plasmons (Physics) , Electronics , Microelectronics , Materials , Thin films , Physics , Optics, Optoelectronics, Plasmonics and Optical Devices , Electronics and Microelectronics, Instrumentation , Surfaces and Interfaces, Thin Films
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Call number:SPRINGER-1990-9783642747519:ONLINE Show nearby items on shelf
Title:Physics of Quantum Electron Devices
Author(s):
Date:1990
Size:1 online resource (403 p.)
Note:10.1007/978-3-642-74751-9
Contents:1. Introduction -- 1.1 A Perspective on the Evolution of Quantum Semiconductor Devices -- 1.2 Outline of the Book -- References -- 2. The Nature of Molecular Beam Epitaxy and Consequences for Quantum Microstructures -- 2.1 Dimensional
Confinement and Device Concepts -- 2.2 Molecular Beam Epitaxy -- 2.3 The Surface Kinetic Processes and Computer Simulations of Growth -- 2.4 Quantum Wells: Growth and Photoluminescence -- 2.5 Concluding Remarks -- 2.6 Recent Advances
-- References -- 3. Nanolithography for Ultra-Small Structure Fabrication -- 3.1 Overview -- 3.2 Resolution Limits of Lithographic Processes -- 3.3 Pattern Transfer -- References -- 4. Theory of Resonant Tunnelling and Surface
Superlattices -- 4.1 Tunnelling Probabilities -- 4.2 Tunnelling Time -- 4.3 Pseudo-Device Calculations -- 4.4 Lateral Superlattices -- References -- 5. The Investigation of Single and Double Barrier (Resonant Tunnelling)
Heterostructures Using High Magnetic Fields -- 5.1 Background -- 5.2 LO Phonon Structure in the I(V) and C(V) Curves of Reverse-Biased Heterostructures -- 5.3 Magnetotunnelling from the 2D Electron Gas in Accumulated (InGa)As/InP
Structures Grown by MBE and MOCVD -- 5.4 Observation of Magnetoquantized Interface States by Electron Tunnelling in Single-Barrier n? (InGa)As/InP/n+ (InGa)As Heterostructures -- 5.5 Box Quantised States -- 5.6 Double Barrier Resonant
Tunnelling Devices -- References -- 6. Microwave and Millimeter-Wave Resonant-Tunnelling Devices -- 6.1 Speed of Response -- 6.2 Resonant-Tunnelling Oscillators -- 6.3 Self-Oscillating Mixers -- 6.4 Resistive Multipliers -- 6.5
Variable Absolute Negative Conductance -- 6.6 Persistent Photoconductivity and a Resonant-Tunnelling Transistor -- 6.7 A Look at Resonant-Tunnelling Theory -- 6.8 Concluding Remarks -- Note Added in Proof -- List of Symbols --
References -- 7. Resonant Tunnelling and Superlattice Devices: Physics and Circuits -- 7.1 Resonant Tunnelling Through Double Barriers and Superlattices -- 7.2 Application of Resonant Tunnelling: Transistors and Circuits -- References
-- 8. Resonant-Tunnelling Hot Electron Transistors (RHET) -- 8.1 RHET Operation -- 8.2 RHET Technology Using GaAs/AlGaAs Heterostructures -- 8.3 InGaAs-Based Material Evaluation -- 8.4 RHET Technology Using InGaAs-Based Materials --
8.5 Theoretical Analyses of RHET Performance -- 8.6 Summary -- References -- 9. Ballistic Electron Transport in Hot Electron Transistors -- 9.1 Ballistic Transport -- 9.2 Hot Electron Transistors -- 9.3 Hot Electron Injectors -- 9.4
Energy Spectroscopy -- 9.5 Electron Coherent Effects in the THETA Device -- 9.6 Transfer to the L Satellite Valleys -- 9.7 The THETA as a Practical Device -- References -- 10. Quantum Interference Devices -- 10.1 Background -- 10.2
Two-Port Quantum Devices -- 10.3 Multiport Quantum Devices -- Appendix: Aharonov — Bohm Phase-shift in an Electric or Magnetic Field -- References -- Additional References -- 11. Carrier Confinement to One and Zero Degrees of Freedom
-- 11.1 Experimental Methods -- 11.2 Discussion of Experimental Results -- 11.3 Conclusions -- References -- 12. Quantum Effects in Quasi-One-Dimensional MOSFETs -- 12.1 Background -- 12.2 MOSFET Length Scales -- 12.3 Special MOSFET
Geometries -- 12.4 Strictly 1D Transport -- 12.5 Multichannel Transport (Particle in a Box?) -- 12.6 Averaged Quantum Diffusion -- 12.7 Mesoscopic Quantum Diffusion (Universal Conductance Fluctuations) -- 12.8 Effect of One Scatterer
-- 12.9 Conclusion -- References
ISBN:9783642747519
Series:eBooks
Series:SpringerLink (Online service)
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Series:Springer Series in Electronics and Photonics: 28
Keywords: Materials science , Electronics , Microelectronics , Optical materials , Electronic materials , Materials Science , Optical and Electronic Materials , Electronics and Microelectronics, Instrumentation
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Call number:SPRINGER-1989-9783642750489:ONLINE Show nearby items on shelf
Title:Amorphous and Crystalline Silicon Carbide II Recent Developments Proceedings of the 2nd International Conference, Santa Clara, CA, December 15—16, 1988
Author(s):
Date:1989
Size:1 online resource (232 p.)
Note:10.1007/978-3-642-75048-9
Contents:I Growth of Crystalline Silicon Carbide -- Crystalline SiC on Si and High Temperature Operational Devices (With 7 Figures) -- Heteroepitaxial Growth of Cubic SiC on a Si Substrate Using the Si2H6-C2H2-H2 System (With 6 Figures) --
Chemical Vapor Deposition of Single Crystal ?-SiC (With 4 Figures) -- ?-Silicon Carbide Prepared by Rapid Thermal Chemical Vapor Deposition (With 4 Figures) -- Single Crystal Growth of 6H-SiC by a Vacuum Sublimation Method, and Blue
LEDs (With 17 Figures) -- Polytype Change of Silicon Carbide at High Temperatures (With 3 Figures) -- Epitaxial Growth of (SiC)xGe1-x on Silicon Substrates (With 1 Figure) -- One-Dimensional Fluid Mechanics/Kinetics Modeling of the CVD
of SiC in a Vertical Reactor -- II Growth of Amorphous, Microcrystalline, and Polycrystalline Silicon Carbide -- Properties of a-SiC:H Films Prepared with a Field-Enhanced RF Glow-Discharge System (With 4 Figures) -- Preparation of
Microcrystalline Silicon Carbide Thin Films for the Emitter of Si HBTs (With 4 Figures) -- High-Quality Microcrystalline SiC Films Fabricated by the Controlled Plasma Magnetron Method (With 10 Figures) -- Electron-Cyclotron-Resonance
Plasma Deposition of Carbon onto Silicon (With 8 Figures) -- Preparation and Characterization of Amorphous SiC Film by a Liquid Route (With 2 Figures) -- III Characterization of Silicon Carbide -- Gap States of Highly Photosensitive
a-SiC:H (With 5 Figures) -- X-Ray Photoelectron Spectroscopy Study of Hydrogenated Amorphous Silicon Carbide Films (With 4 Figures) -- Doping-Induced Structural Change in Amorphous Silicon (Carbon) Hydrogen Alloy (With 6 Figures) --
Small Angle X-Ray Scattering from Microvoids in the a-SiC:H Alloy (With 3 Figures) -- Studies on Carrier Lifetime and Deep Levels in CVD-Grown 3C-SiC by Photoconductivity and Microwave Absorption (With 8 Figures) -- ESR Study of
Defects in Epitaxially Grown 3C-SiC (With 4 Figures) -- Time-Resolved Photoluminescence Studies of Undoped and Al-Doped Cubic SiC (With 3 Figures) -- Photoluminescence Imaging of Spatial Distribution of Recombination Centers in Cubic
SiC (With 3 Figures) -- Stress-Induced Defects vs Growth Faults in CVD-Grown SiC -- Crystalline Defects in ?-SiC as Revealed by a NaOH-KOH Eutectic Etch (With 6 Figures) -- Ellipsometric Study of Cubic SiC -- Photoluminescence and
Transmission Electron Microscopy of Defects in SiC Grown on Si -- Vibrational and Electrical Properties of n and p Doped a-SiC:H Films -- IV Growth and Applications of Diamond Thin Films -- Current Status of Diamond Thin Films -- New
Material and Device Design Considerations for High-Power Electronics -- Active and Passive Electronic Applications of CVD Diamond Films -- V Surfaces and Interfaces of Silicon Carbide -- Surface and Interface Studies of SiC
(Buffer-Layer)/Si(100) (With 6 Figures) -- The Influence of Hydrogen on the Transition from Amorphous to Crystalline Structure in Plasma Deposition of Silicon and Alloys -- Microstructure of the a-Si1-xCx:H/c-Si Interface (With 2
Figures) -- Atomic Layer Control in Cubic SiC Growth Utilizing Surface Superstructure in Gas Source MBE (With 7 Figures) -- On the Stability of a Cr + C Phase on (100) 3C SiC at Elevated Temperatures -- VI Processing and Device
Applications of Silicon Carbide -- Physics and Applications of Amorphous Silicon Carbide (With 6 Figures) -- ?-SiC on Titanium Carbide for Solid State Devices (With 12 Figures) -- Fabrication of MOSFETs on ?-SiC Single Crystalline
Layers Grown on Si(100) Substrates (With 6 Figures) -- A High Transconductance ?-SiC Buried-Gate Junction Field Effect Transistor (With 5 Figures) -- SiC as a Potential FET Gate Insulator (With 8 Figures) -- Applications of High Purity
SiC Prepared by Chemical Vapor Deposition (With 12 Figures) -- SiC/Si HBT Using Polycrystalline SiC Layers Prepared by Electron Beam Evaporation (With 5 Figures) -- Thin Film Transistors Using Polycrystalline SiC (With 8 Figures) --
Mechanisms in Reactive Ion Etching of Silicon Carbide Thin Films (With 6 Figures) -- W/SiC Contact Resistance at Elevated Temperatures (With 2 Figures) -- Application of Excimer Laser Processing in SiC Device Fabrication -- Index of
Contributors
ISBN:9783642750489
Series:eBooks
Series:SpringerLink (Online service)
Series:Springer eBooks
Series:Springer Proceedings in Physics: 43
Keywords: Physics , Polymers , Crystallography , Electronics , Microelectronics , Materials science , Physics , Crystallography , Polymer Sciences , Electronics and Microelectronics, Instrumentation , Characterization and Evaluation of Materials
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Call number:SPRINGER-1988-9781468455533:ONLINE Show nearby items on shelf
Title:Properties of Impurity States in Superlattice Semiconductors
Author(s):
Date:1988
Size:1 online resource (351 p.)
Note:10.1007/978-1-4684-5553-3
Contents:I. Growth Techniques and Characterizations of Superlattice Semiconductors -- 1 Doping in Two Dimensions: The ?-Layer -- 2 Optical Measurements of Acceptor Concentration Profiles at GaAs/GaAlAs Quantum Well Interfaces -- 3 Molecular
Beam Epitaxy of Ga0.99Be0.01As for Very High Speed Heterojunction Bipolar Transistors -- 4 Progress Report on Molecular Beam Epitaxy of III–V Semiconductors — from Fibonacci to Monolayer Superlattices -- 5 Interface Characterization of
GaInAs-InP Superlattices Grown by Low Pressure Metalorganic Chemical Vapor Deposition -- 6 Structural and Chemical Characterization of Semiconductor Interfaces by High Resolution Transmission Electron Microscopy -- II. Deep and Shallow
Impurity States -- 7 Deep Level Behavior in Superlattice -- 8 Role of the Si Donors in Quantum and Ultraquantum Transport Phenomena in GaAs-GaAlAs Heterojunctions -- 9 Defects Characterization in GaAs-GaAlAs Superlattices -- 10 Studies
of the DX Centre in Heavily Doped n+GaAs -- 11 Shallow and Deep Impurity Investigations: the Important Step Towards a Microwave Field-Effect Transistor Working at Cryogenic Temperatures -- 12 Electronic States in Heavily and Ordered
Doped Superlattice Semiconductors -- 13 Properties of Impurity States in n-i-p-i Superlattice Structures -- 14 Deep Impurity Levels in Semiconductors, Semiconductor Alloys, and Superlattices -- 15 “Pinning” of Transition-Metal Impurity
Levels -- III. Quantum Well States -- 16 Theory of Impurity States in Superlattice Semiconductors -- 17 Effective-Mass Theory of Electronic States in Heterostructures and Quantum Wells -- 18 Hot Electron Capture in GaAs MQW: NDR and
Photo-Emission -- 19 In-Plane Electronic Excitations in GaAs/GaAlAs Modulation Doped Quantum Wells -- 20 Resonant Tunneling in Double Barrier Heterostructures -- 21 Extrinsic Photoluminescence in Unintentionally and Magnesium Doped
GaInAs/GaAs Strained Quantum Wells -- 22 Magneto-Optics of Excitons in GaAs-(GaAl) As Quantum Wells -- IV. Two Dimensional and Other Electronic Properties -- 23 The Influence of Impurities on the Shubnikov-De Haas and Hall Resistance
of Two-Dimensional Electron Gases in GaAs/AlxGa1-xAs Heterostructures Investigated by Back-Gating and Persistent Photoconductivity -- 24 Cyclotron Resonance of Polarons in Two Dimensions -- 25 Structure and Electronic Properties of
Strained Si/Ge Semiconductor Superlattices -- 26 Theory of Raman Scattering from Plasmons Polaritons in GaAs/AlxGa1-xAs Superlattices -- In dex
ISBN:9781468455533
Series:eBooks
Series:SpringerLink (Online service)
Series:Springer eBooks
Series:NATO ASI Series, Series B: Physics: 183
Keywords: Physics , Solid state physics , Physics , Solid State Physics
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Call number:SPRINGER-1987-9781489919892:ONLINE Show nearby items on shelf
Title:GaAs Devices and Circuits
Author(s): Michael Shur
Date:1987
Size:1 online resource (670 p.)
Note:10.1007/978-1-4899-1989-2
Contents:1. Chemical Bonds and Crystal Structure -- 2. Band Structure and Transport Properties -- 3. GaAs Technology -- 4. Ridley-Watkins-Hilsum-Gunn Effect -- 5. Transferred Electron Oscillators -- 6. Transferred Electron Amplifiers and Logic
and Functional Devices -- 7. GaAs FETs: Device Physics and Modeling -- 8. GaAs FET Amplifiers and Microwave Monolithic Integrated Circuits -- 9. GaAs Digital Integrated Circuits -- 10. Modulation Doped Field Effect Transistors -- 11.
Novel GaAs Devices -- New developments and Recent References -- Appendixes -- A. Some Room-Temperature (300K) Properties of GaAs -- B. Microwave Bands
ISBN:9781489919892
Series:eBooks
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Keywords: Engineering , Electrical engineering , Optical materials , Electronic materials , Engineering , Electrical Engineering , Optical and Electronic Materials
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Call number:SPRINGER-1986-9783642829796:ONLINE Show nearby items on shelf
Title:High-Speed Electronics Basic Physical Phenomena and Device Principles
Author(s):
Date:1986
Size:1 online resource (234 p.)
Note:10.1007/978-3-642-82979-6
Contents:I Hot-Electron Dynamics -- Modelling of High Electron Velocity Effects for Devices -- Ballistic Transport and Electron Spectroscopy in Tunnelling Hot Electron Transfer Amplifiers (THETA) -- Hot Electron Transistors -- Tunneling
Through III—V Low-Barrier Heterostructures -- Velocity Overshoot and Suppression of Diffusivity and Microwave Noise in Short n+-n-n+ Structures of GaAs -- Mobility Overshoot of Hot Electrons -- Monte-Carlo Simulation of the Effects
Induced by Real-Space Transfer in a HEMT -- Application of the Integral Boltzmann Equation to the Hot Electron Problem in an Inhomogeneous Submicron Structure -- Three Picosecond Oscillations in Avalanche Electron- Hole Plasma Induced
by Energy Relaxation Phenomena -- II Heterostructures, Superlattices and Quantum Wells -- Resonant Tunneling Transistors, Tunneling Superlattice Devices and New Quantum Well Avalanche Photodiodes -- Novel Real-Space Transfer Devices --
Transport Characteristics in Heterostructure Devices -- Technical Issues of High-Speed Heterostructure Devices -- Hot-Carrier-Excited Two-Dimensional Plasmon in Selectively Doped AIGaAs/GaAs Heterointerface Under High Electric Field
Application -- Optical High-Field-Transport Experiments in GaAs Quantum Wells -- Optical Time-of-Flight Investigation in Ambipolar Carrier Transport in Specially Designed GaAs/GaA1As Quantum Well Structures -- An Ultra-Fast Optical
Modulator: The Double-Well GaAs/GaAlAs Superlattice (DWSL) -- High-Velocity Vertical Transport in Graded Gap GaAs/GaA1As Superlattices -- Modelling of Mobility Degradation in Submicron MOSFETs After Electrical Stressing -- Negative
Differential Mobility and Drift Velocity Overshoot in a Single Quantum Well of AIGaAs/GaAs/AIGaAs Heterostructure -- Monte Carlo Study of Hot Electron Transport in GaAs-AIGaAs Quantum Wells -- III High-Speed Electronic Devices --
High-Speed Bulk Unipolar Structures in Silicon -- Silicon Bulk Barrier Diodes Fabricated by LPVPE -- Impact Ionization Breakdown of GaAs Current Limiters -- The New High Speed Devices: The Barrier Transistor and the TEG-Base Transistor
-- Monte Carlo Investigation of the High Electron Mobility Transistor -- Excess Gate Current Due to Hot Electrons in GaAs-Gate FETs -- Potential Barriers in Doped GaAs by OM-VPE -- Low Noise High Electron Mobility Transistors Grown By
MOVPE -- Emitter-Coupled Logic Ring Oscillators Implemented with GaAs/GaAlAs Single and Double Heterojunction Bipolar Transistors: A Comparison -- Self-Aligned Technology Using Refractory Ohmic Contacts for GaAs/GaAlAs Heterojunction
Bipolar Transistors -- Novel Cryoelectronic Device Concept Based on Magnetically Controlled Current Flow in Bulk Semiconductors -- InGaAlAs/InGaAs/InGaAlAs NnpnN Double Heterojunction Bipolar Transistors: Experimental Characteristics
and Monte-Carlo Interpretation -- Lattice-Strained Double Heterojunction InGaAs/GaAs Bipolar Transistors -- Cryogenic GaAs Integrated Circuits Using a Lightly Doped GaAs FET Structure -- GaAs-on-Insulator Structure Prepared by
Heteroepitaxy of Fluorides and GaAs -- IV High-Speed Opto-Electronics -- Optoelectronic Generation of Very High Speed Electromagnetic Transients -- Picosecond Electro-Optic Sampling -- High-Speed Integrated Circuit Testing by
Time-Resolved Photoemission -- Overview of Optical Switching and Bistability -- Monte Carlo Investigation of High-Speed GaAs Schottky Barrier Photodiode -- A High-Speed Au/In0.53Ga0.47As/InP Schottky Barrier Photodiode for 1. 3–1. 65µm
Photodetection -- High Sensitivity Picosecond Optical Pulse Detection by Semiconductor Laser Amplifiers Via Cross-Correlation -- GaAs Photoconductors to Characterize Picosecond Response in GaAs Integrated Devices and Circuits --
Characterization of On-Chip Polycrystalline Silicon Photoconductors -- Index of Contributors
ISBN:9783642829796
Series:eBooks
Series:SpringerLink (Online service)
Series:Springer eBooks
Series:Springer Series in Electronics and Photonics: 22
Keywords: Materials science , Electronics , Microelectronics , Optical materials , Electronic materials , Materials Science , Optical and Electronic Materials , Electronics and Microelectronics, Instrumentation
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Call number:SPRINGER-1984-9781468446555:ONLINE Show nearby items on shelf
Title:Metal-Semiconductor Schottky Barrier Junctions and Their Applications
Author(s):
Date:1984
Size:1 online resource (386 p.)
Note:10.1007/978-1-4684-4655-5
Contents:1. Physics of Schottky Barrier Junctions -- 1. Introduction -- 2. Origins of Barrier Height -- 3. Measurement of Barrier Height -- 4. Results of Barrier Height Measurements -- 5. Capacitance-Voltage Characteristics -- 6.
Current-Voltage Characteristics -- 7. Transient Behavior -- 8. Low-Resistance Schottky Barrier Contacts -- References -- 2. Interface Chemistry and Structure of Schottky Barrier Formation -- 1. Introduction -- 2. Perspectives on
Schottky Barrier Formation -- 3. The Chemistry and Structure of the Interfacial Layer -- 4. Evolution of the Interfacial Layer -- 5. Formation of Interface States -- 6. Case Studies of the Chemistry and Structure of Schottky Barrier
Formation -- 7. Summary -- References -- 3. Fabrication and Characterization of Metal-Semiconductor Schottky Barrier Junctions -- 1. Introduction -- 2. Selection of Semiconductor Materials -- 3. Metal-Semiconductor Systems -- 4. Design
Considerations -- 5. Fabrication Technology -- 6. Characterization -- References -- 4. Schottky-Barrier-Type Optoelectronic Structures -- 1. Introduction -- 2. Barrier Formation in Schottky-Barrier-Type Junctions -- 3. Transport in
Schottky-Barrier-Type Structures -- 4. Schottky-Barrier-Type Optoelectronic Structures -- 3. Summary -- References -- 5. Schottky Barrier Photodiodes -- 1. Introduction -- 2. General Parameters of Photodiodes -- 3. Selection of
Materials -- 4. Fabrication Technology -- 5. Techniques for Evaluating Device Parameters -- 6. Applications -- 7. Conclusions -- References -- 6. Microwave Schottky Barrier Diodes -- 1. Introduction -- 2. Diode Design Considerations --
3. Properties of Schottky Barrier Diodes -- 4. Microwave Performance -- 5. RF Pulse and CW Burnout -- 6. Conclusions -- References -- 7. Metal-Semiconductor Field Effect Transistors -- 1. Introduction -- 2. Small-Signal FET Theory --
3. Design Parameters of a Low-Noise Device -- 4. Practical Small-Signal FET Fabrication Techniques -- 5. GaAs Power Field Effect Transistors -- 6. Conclusions -- References -- 8. Schottky Barrier Gate Charge-Coupled Devices -- 1.
Introduction -- 2. Schottky Gate CCDs -- 3. Potential-Charge Relationships -- 4. Charge Storage Capacity -- 5. Charge Transfer -- 6. Input-Output Circuits -- 7. Schottky Gate Heterojunction CCDs -- 8. Experimental Results -- 9.
Applications -- References -- 9. Schottky Barriers on Amorphous Si and their Applications -- 1. Introduction -- 2. Properties of Amorphous Si -- 3. The Schottky Barrier on ?-Si:H -- 4. Interface Kinetics and Its Effect on the Schottky
Barrier -- 5. Applications -- 6. Concluding Remarks -- References
ISBN:9781468446555
Series:eBooks
Series:SpringerLink (Online service)
Series:Springer eBooks
Keywords: Physics , Condensed matter , Solid state physics , Crystallography , Spectroscopy , Microscopy , Physics , Solid State Physics , Spectroscopy and Microscopy , Condensed Matter Physics , Crystallography
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Call number:SPRINGER-1971-9783642806605:ONLINE Show nearby items on shelf
Title:Ion Implantation in Semiconductors Proceedings of the II. International Conference on Ion Implantation in Semiconductors, Physics and Technology, Fundamental and Applied Aspects May 24–28, 1971, Garmisch-Partenkirchen, Bavaria, Germany
Author(s):
Date:1971
Size:1 online resource (508 p.)
Note:10.1007/978-3-642-80660-5
Contents:I. Disorder in Ion Implanted Silicon -- 1.1 Ionization and Thermal Dependences of Implantation Disorder in Silicon -- 1.2 Localized Mode of Substitutional Carbon in Ion-Implanted Silicon -- 1.3 Inventory of Paramagnetic Defects in
Ion-Implanted Silicon -- 1.4 Structural Differences in Light and Heavy Ion Disorder in Si Studied by Single and Double Alignment Channeling Techniques -- 1.5 Investigation of Ion Implantation Damage with Stress Measurements -- 1.6
Energy Levels of Defects in Ion Implanted Silicon -- 1.7 Photoconductivity of Boron Implanted Silicon -- 1.8 Electron Paramagnetic Resonance on Divacancies in Phosphorus-Implanted Silicon -- II. Implantation of Boron and Phosphorus
into Silicon -- II. 1 Distribution of Boron Implanted Silicon -- 11.2 Phosphorus Channeled in Silicon: Profiles and Electrical Activity -- 11.3 Enhanced Annealing Effects of Boron Implanted Layers in Silicon by Post-Implantation of
Silicon Ions -- 11.4 Electrical Profiles of Ion Implanted Silicon and their Comparison with Defect Structures -- 11.5 A New Method for Boron Doping of Silicon by Implantation of BF2-Molecules -- 11.6 Crystal Defects and Electrical
Properties in Ion-Implanted Silicon -- 11.7 Amorphization of Silicon Crystals Bombarded by 30 keV Phosphorus Ions at Different Temperatures -- 11.8 Additional Ion Bombardment of Well Annealed Silicon Crystals Implanted with Phosphorus
and Arsenic -- 11.9 The Influence of Ion Beam Current Densities on the Electrical Properties of Boron Implanted Silicon -- II. 10 The Evaluation of Electrically Active Damage in Hot, Phosphorus Implantations in Silicon by Means of
Hall-Effect Measurements -- III. Implantation into Compound Semiconductors -- III. 1 Backscattering Analysis and Electrical Behavior of SiC Implanted with 40 keV Indium -- III.2 Anomalous Diffusion of Defects in Ion-Implanted GaAs --
III. 3 Enhanced Diffusion in Ion-Bombarded GaAs -- III.4 The Effects of Dose Rate and Implantation Temperature on Lattice Damage and Electrical Activity in Ion Implanted GaAs -- III.5 The Effects of Arsenic Ion Implantation in GaAs --
III. 6 Implantation of Zinc into GaAs at 1 MeV -- III.7 Implantation of Bi into GaP III. Hot-Implant Behaviour -- III.8 The Influence of Various Parameters on Radiation Damage in GaP -- III.9 The Retention of Bi Ions Implanted in GaAs
-- III.10 The Annealing Behaviour of Gallium Phosphide in the Region 110–500°K after 300 keV Neon Irradiation -- IV. Compound and Amorphous Semiconductors -- IV. 1 Compensation of N-Type GaAs by Proton Bombardement -- IV.2 Ion
Implanted p-n Junctions in GaAs0.6P0.4 -- IV. 3 Lattice Disorder and Outdiffusion in Ion Implanted InSb and CdTe -- IV.4 Ion-Implantation of Nitrogen into n-Type Cadmium Sulfide -- IV.5 Infrared Studies of SiC, Si3N4, and SiO2
Formation in Ion-Implanted Silicon -- IV. 6 Ion Implantation and Amorphous Materials -- IV.7 Raman Spectra of Amorphous Semiconductors Prepared by Ion Bombardement -- IV.8 Effects of Implantation on Thin Layers of Aluminum
Metallization on Silicon -- IV. 9 Crystalline to Amorphous Transformation in Ion-Bombarded Silicon -- V. Techniques and Germanium -- V. 1 Analysis of Contact Formation and Surface Layers on Semiconductors -- V. 2 New Aspects of Atom
Location: Flux Peaking -- V.3 Dimpling — a New Manifestation of Ion Produced Lattice Damage -- V.4 The Use of Ion-Induced X-Rays to Investigate the Concentration Distribution and Atom Location of Boron-Implanted Silicon -- V. 5
Electrical Properties of Ion Implanted Germanium -- VI. Devices 1 -- VI. 1 Recent Advances in Ion Implanted MOS Technology -- VI.2 Recent Advances in Ion Implanted Junction-Device Technology -- VI. 3 Enhanced Diffusion of Substrate
Impurities into Epitaxial Layers in Si by Proton Irradiation -- VI.4 Junction Field Effect Transistors Fabricated by Ion Implantation -- VI. 5 Microwave Transistors Fabricated by I on-Implantation Selection of Doping Impurities and
Phototype Realization -- VI.6 Application of Ion Implantation to N-P-N-Transistors -- VI.7 New Techniques for Improving High Value Ion Implanted Resistors -- VI.8 Piezoresistive Properties of Ion Implanted Layers in Silicon -- VII.
Devices 2 -- VII.1 Surface States Induced by Ion Implantation -- VII.2 Speed Improvement of Ion Implanted Self Aligned Gate MOS Transistors -- VII. 3 Chemical and Electrical Behaviour of Ion Implanted SiO2 Films -- VII.4 Ion Implanted
Thermoresistive Device for Cryogenic Temperatures -- VII.5 Ion Implanted Light Sensing Diodes -- VII.6 The Application of Ion Implantation to Avalanche Multiplication Devices -- VII.7 Ion Implanted p-n Junctions in Near Intrinsic
n-Type Silicon for Nuclear Particle Detectors -- VII.8 Boron Implanted Contacts on High Purity Germanium -- VII.9 New Ion Implantation Areas -- VIII. Implantation into Silicon -- VIII. 1 Non-Gaussian Implantation Profiles -- VIII. 2
Atom Location in the Case of Enhanced Diffusion Measured by Backscattering Method -- VIII.3 Enhanced Diffusion and Electrical Properties of Ion Implanted Silicon -- VIII.4 The Presence of Deep Levels in Silicon Implanted with Channeled
Low Energy Phosphorus Ions -- VIII.5 Mobility, Resistivity and Carrier Concentration Measured on Silicon Implanted with Channeled and Nonchanneled Indium Ions -- VIII.6 Ionization Energy Determination in Indium Implanted Silicon --
VIII.7 Some Observations on High Energy Nitrogen Implantations in Silicon -- VIII.8 Nitrogen Implantation of p-Silicon at Cryogenic Temperatures -- VIII.9 Conductive Properties of the Ion Implanted Binary System Si1-XA1X
ISBN:9783642806605
Series:eBooks
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Keywords: Physics , Medicine , Semiconductors , Physics , Semiconductors , Medicine/Public Health, general
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